? 2013 microchip technology inc. ds75083a-page 1 features ? input/output ports internally matched to 50 and dc decoupled ? package available - 16-contact xqfn ? 2. 5mm x 2.5mmx 0.4mm ? all non-pb (lead-free) devices are rohs compliant transmitter chain ? gain: - typically 24 db gain ? dynamic linear output power: - meets 802.11g ofdm acpr requirement up to 21 dbm - 3% evm up to 17 dbm for 802.11g, 54 mbps - 1.75% dynamic evm up to 15 dbm for 256 qam, 40 mhz bandwidth ? operating current for 802.11g/n applications -170ma @ p out = 17 dbm for 802.11g -130 ma @ p out = 15 dbm for 802.11n ? pa control current, i pen :<2ma ? idle current, i cq :105ma ? low shut-down current: ~2 a ? power-up/down control - turn on/off time (10%?90%) <400 ns ? limited variation over temperature - ~1 db gain/power variation between -40c to +85c ? linear on-chip power detection - load and temperature insensitive - >20 db dynamic range on-chip power detection receiver chain ? gain: typically 13 db gain ? noise figure: typically 2.5 db ? receiver input p1db: typically -6 dbm ? lna bypass loss: typically 9 db bluetooth ? chain ? loss: 1.0 db ? output p1db: >25 dbm applications ? wlan (ieee 802.11b/g/n) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 1.0 product description sst12lf09 is a 2.4 ghz front-end module (fem) designed in compliance wit h ieee 802.11b/g/n applica- tions. based on gaas phemt/hbt technology, it com- bines a high-performance power amplifier (pa), a low- noise amplifier (lna) and an antenna tx/rx switch (sw). the input/output rf ports are single-ended and internally matched to 50 . these rf ports are dc decoupled, and require no dc-blocking capacitors or matching components. this helps reduce the system board bill of materials (bom) cost. there are two components to the fem: the transmitter (tx) chain and the receiver (rx) chain. the tx chain includes a high-efficiency pa based on the ingap/gaas hbt technology. the transmitter is optimized for high linearity, 802.11n and 256 qam operation?typically providing 15 dbm with 1.75% dynamic evm for 256 qam, 40 mhz operation and 17 dbm at 3% for 802.11g, 54 mbps operation. sst12lf09 has an excellent transmitter on-chip, sin- gle-ended power detector that is stable over tempera- ture and insensitive to output vswr. it features a wide dynamic-range (20 db) with db-wise linear operation. the on-chip power detector provides a reliable solution to board-level power control. the rx chain provides typically 13 db gain with 2.5 db noise figure. with the lna bypassed, the receiver loss is typically 9 db. sst12lf09 also features a blue- tooth ? path with typically 1.0 db loss. sst12lf09 is offered in a16-contact x2qfn package. see figure 3-1 for pin assignments and ta b l e 4 - 1 for pin descriptions. sst12lf09 2.4 ghz high-gain, high-efficiency front-end module
sst12lf09 ds75083a-page 2 ? 2013 microchip technology inc. 2.0 functional blocks figure 2-1: functional block diagram 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 75083 b1.1 gnd bt vdd len det nc vcc vcc ant gnd crx cbt tx pen gnd rx pa lna
? 2013 microchip technology inc. ds75083a-page 3 sst12lf09 3.0 pin assignments figure 3-1: pin assignment s for 16-contact x2qfn 4.0 pin descriptions 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 75083 p1.0 top view (contacts facing down) rf and dc gnd gnd bt vdd len det nc vcc vcc ant gnd crx cbt tx pen gnd rx table 4-1: pin description symbol pin no. pin name type 1 1. i=input, o=output function det 1o detector output voltage ground nc 2 no connect vcc 3 power supply pwr supply voltage pa vcc 4 power supply pwr supply voltage pa tx 5i rf transmit input pen 6i pa enable gnd 7 ground ground pad rx 8 o rx output len 9 lna enable vdd 10 pwr supply voltage lna bt 11 bluetooth rf port gnd 12 ground ground pad cbt 13 bluetooth switch control crx 14 receiver switch control voltage gnd 15 ground ground pad ant 16 i/o antenna
sst12lf09 ds75083a-page 4 ? 2013 microchip technology inc. 5.0 electrical specifications the dc and rf specifications for the power amplifier are specified below. refer to table 5-2 for the dc volt- age and current specifications. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maxi- mum stress ratings? may cause permanent damage to the device. this is a stress rating only and func- tional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) tx input power to pin 5 (tx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm rx input power to pin 16 (ant with lna on). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm average tx output power from pin 16 (ant) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dbm 1. n ever measure w ith cw source. pulsed single-tone source w ith <50% duty cycle is reco mmended. exceeding the maximum rating of average output po w er could cause permanent damage to the device. supply voltage at pins 3 and 4 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +5.5v supply voltage at pin 10 (v dd ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +5.5v pa enable voltage to pin 6 (pen) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.6v dc supply current (i cc ) 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma 2. measured w ith 100% duty cycle 54 mbps 8 02.11g ofdm signal dc supply current (i dd ) 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds table 5-1: operating range range ambient temp v cc extended -40c to + 8 5c 3.0-5.0 v table 5-2: dc electrical characteristics at 25c for tx chain symbol parameter min. typ max. unit v cc supply voltage at pins 3 and 4 3.0 3.6 5.0 v v dd supply voltage at pin 10 3.0 3.6 5.0 v i cq tx idle current for 802.11g to meet evm ~3% @ 17 dbm 105 ma v pen tx enable voltage 3.05 3.10 3.15 v i cc tx supply current for 11g ofdm 54 mbps signal, p out = 17 dbm 170 ma i dd rx supply current (with lna on) 9ma
? 2013 microchip technology inc. ds75083a-page 5 sst12lf09 table 5-3: tx chain rf characteristics at 25c symbol parameter min. typ max. unit f l-u frequency range 2.4 2.5 ghz linearity, output power with <3% evm, 802.11g @ 54 mbps ofdm 17 dbm output power level 1.75% dynamic evm, 256 qam, 40 mhz 15 dbm output power level 2.5% dynamic evm, 802.11n, ht40 16 dbm gg a i n 22 24 db rl in input return loss at tx port 14 db v det power detector output voltage 5 sst12lf09 ds75083a-page 6 ? 2013 microchip technology inc. 6.0 typical performance characteristics transmitter test conditions: v cc = 3.6v, pen = 3.10v, len = 0v, crx = 0v, cbt = 0v, t a = 25c, unless otherwise specified figure 6-1: s-parameters figure 6-2: transmitter evm versus output power measured using 802.11g with equalizer training using sequence only -50 -40 -30 -20 -10 0 10 20 30 012345678910 s - parameter, db frequency, ghz s11 s21 s12 s21 75083 f6.0 75083 f1.1 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 evm (%) output power (dbm) 2412 2442 2472
? 2013 microchip technology inc. ds75083a-page 7 sst12lf09 figure 6-3: transmitter dynamic evm versus output power measured using 256 qam, 40 mhz bandwidth with equalizer training using sequence only figure 6-4: gain versus output power 75083 f8.0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 evm (%) output power (dbm) 2412 2442 2472 75083 f2.1 15 16 17 18 19 20 21 22 23 24 25 5 6 7 8 9 1011121314151617181920 power gain (db) output power (dbm) 2412 2442 2472
sst12lf09 ds75083a-page 8 ? 2013 microchip technology inc. figure 6-5: transmitter dc current versus output power figure 6-6: detector volt age versus output power 75083 f3.1 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 0123456789101112131415161718192021 supply current (ma) output power (dbm) 2412 2442 2472 75083 f4.1 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 0123456789101112131415161718192021 detector voltage (v) output power (dbm) 2412 2472 2472
? 2013 microchip technology inc. ds75083a-page 9 sst12lf09 receiver test conditions: v cc = 3.6v, len = 3.3v, crx = 3.3v, pen = 0v, cbt = 0v, t a = 25c, unless otherwise specified figure 6-7: receiver s-parameter figure 6-8: receiver noise figure -40 -30 -20 -10 0 10 20 012345678910 s - parameter, db frequency, ghz s11 s21 s12 s21 75083 f7.0 75083 f5.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.4 2.45 2.5 noise figure, db frequency, ghz
sst12lf09 ds75083a-page 10 ? 2013 microchip technology inc. figure 6-9: typical schematic 75083 schematic 1.2 12lf09 vcc bt crx cbt 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 len 0.1 f pen vdd 0.1 f det nc vcc 0.1 f 50 tx 50 rx 50 50 ant 2.2 f
? 2013 microchip technology inc. ds75083a-page 11 sst12lf09 7.0 product iden tification system to order or obtain information, e.g., on pricing or deli very, refer to the factory or the listed sales office. part no. device device: sst12lf09 = 2.4 ghz high-gain, high-efficiency front-end module package: q3ce = x2qfn (2.5mm x 2.5mm), 0.4 max thickness 16-contact evaluation kit flag k = evaluation kit valid combinations: SST12LF09-Q3CE SST12LF09-Q3CE-k xxx package
sst12lf09 ds75083a-page 12 ? 2013 microchip technology inc. 8.0 packaging diagrams figure 8-1: 16-contact super-thin qual flat no-lead (xqfn) package code: q3c table 8-1: revision history revision description date a ? initial release of data sheet may 2013 note: 1. from the bottom v iew, the pin #1 indicator may b e either a 45-degree chamfer or a half-circle notch. 2. the topside pin #1 indicator is laser engra v ed; its approximate shape and location is as shown. 3. the external paddle is electrically connected to the die b ack-side and to v ss . this paddle must be soldered to the pc b oard; it is requ ired to connect this paddle to the v ss of the unit. connection of this paddle to any other v oltage potential will resu lt in shorts and electrical malfunction of the de v ice. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-x2qfn-2.5x2.5-q3c-2.0 0.5 bsc see notes 2 and 3 pin #1 0.25 0.15 0.075 0.127 0.275 0.175 top vie w bottom vie w side view 1 mm 2.50 0.05 2.50 0.05 pin #1 (laser engra v ed see note 2) 1.35 1.35 0.40 0.34 0.05 max
? 2013 microchip technology inc. ds75083a-page 13 sst12lf09 the microchip web site microchip provides online support via our www site at www.microchip.com . this web site is used as a means to make files and information easily available to customers. accessible by using your favorite internet browser, the web site contains the following information: ? product support ? data sheets and errata, application notes and sample programs, design resources, user?s guides and hardware support documents, latest software releases and archived software ? general technical support ? frequently asked questions (faqs), technical support requests, online discussion groups, microchip consultant program member listing ? business of microchip ? product selector and ordering guides, latest microchip press releases, listing of seminars and events, listings of microchip sales offices, distributors and factory representatives customer change notification service microchip?s customer notification service helps keep customers current on microchip products. subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. to register, access the microchip web site at www.microchip.com . under ?support?, click on ?customer change notification? and follow the registration instructions. customer support users of microchip products can receive assistance through several channels: ? distributor or representative ? local sales office ? field application engineer (fae) ? technical support ? development systems information line customers should contact their distributor, representative or field application engineer (fae) for support. local sales offices are also available to help customers. a listing of sa les offices and locations is included in the back of this document. technical support is available through the web site at: http://microchip.com/support
? 2013 microchip technology inc. ds75083a-page 14 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, th e microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered tradema rks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, a pplication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2013, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-62077-241-6 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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